Wide Bandgap Semiconductors

SiC Schottky Diode

Company PANJIT International Inc. was founded in 1986 in Kaohsiung Taiwan. Panjit is employing approximately 3.000 people worldwide in their production sites and offices in Asia, Europe and the USA. With one Front-End factory in Taiwan and two Back-End factories in both, Taiwan and mainland China, Panjit is targeting the market segments like Automotive -, Industry-, Power- and Consumer-Applications.

It’s well assorted product spectrum stretches over various kinds of DiodesMOSFETsBipolar Transistors and Protection devices and has some specialties like SiC Schottky Diodes (SiC = Siliciumcarbid). Panjit is decorated with industry’s well known and required certificates like ISO9001, ISO14001, OHSAS18001 and IATF16949. Panjit and BECK ELEKTRONIK have formed a long and dedicated partnership for more than 15 years.

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (SI) and carbon (C).

SiC has many advantages in comparision to Si:

  1. SiC has ten times the dieletric breakdown field strength of Si
  2. SiC has three times the bandgap of Si
  3. SiC has three times the thermal conductivity of Si

These advantages make SiC devices far exceed the performance of their Si counterpartes with higher breakdown voltage, lower resistivity and higher operation temperature.

PANJIT offers SiC Schottky Diode from 650V to 1200V Breakdown Voltage and from 2A to 11A forward current.

Based on SiC and packaging technology PANJIT's SiC Schokkty Diodes have following features:

  • Temperature Independent fast Switching Behavior
  • Low Conduction and Switching Loss (less noise)
  • High Surge Current Capability
  • Positive Temperature Coefficient on Vf ( avoid thermal run away when used in parallel )
  • Fast Reverse Recovery
  • 175°C Maximum Operating Junction Temperature

Product overview of SiC Schottky Diodes of our partner PANJIT (AEC-Q available)


The abbreviation JSCJ stands for Jiangsu Changjing Electronics Co., Ltd, a strongly emerging young company located in the city of Nanjing in Jiangsu province, China. JSCJ is the offspring of JCET, one of TOP3 of World’s biggest OSAT (Outsourced Semiconductor Assembly & Test) companies and dedicated (with this powerful background) to become one of the leading players in its market for semiconductor products.

JSCJ is offering a huge variety of products to address markets in the Industry, Consumer and Whitegoods sector and is furthermore continuously advancing into Automotive applications is focusing diodestransistorsfrequency devices (Crystal and Oscillator) and ICs with an ever-growing product portfolio. JCET, not only serves its own brand “JSCJ” but also many international semiconductors companies as ODM partner, has industry leading quality standards and carries certificates like ISO9001, ISO14001, OHSAS18001 and IATF16949.

JSCJ and BECK ELEKTRONIK cooperate from the very early stage of the founding of the brand “JSCJ” in 2019.

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (SI) and carbon (C).

SiC has many advantages in comparision to Si:

  1. SiC has ten times the dieletric breakdown field strength of Si
  2. SiC has three times the bandgap of Si
  3. SiC has three times the thermal conductivity of Si

These advantages make SiC devices far exceed the performance of their Si counterpartes with higher breakdown voltage, lower resistivity and higher operation temperature.

JSCJ offers currently 650V, 10A SiC Schottky Diodes in TO Package, more variante are in developing.

Based on SiC and packaging technology JSCJ's SiC Schottky Diodes have following features:

  • Temperature Independent fast Switching Behavior
  • Low Conduction and Switching Loss (less noise)
  • High Surge Current Capability
  • Positive Temperature Coefficient on Vf ( avoid thermal run away when used in parallel )
  • Fast Reverse Recovery
  • 175°C Maximum Operating Junction Temperature