Transistors

Bipolar / MOSFET – from LRC, PANJIT, TS and JSCJ

Leshan Radio Company (LRC) was founded in 1971 in the city of Leshan, south of Chengdu in China‘s Sichuan province. In 1995, LRC and Motorola (now OnSemi) formed a joint venture called Leshan Phoenix Semiconductor (LPS) to manufacture small signal diodes in the city of Leshan. In 2011, LRC followed up with an expansion of its own production capacity by establishing a new plant: Chengdu Advanced Power Semiconductor (APS). Consequently, LRC reaches a total production capacity of >1 billion small signal diodes per week; this helped LRC enter the world TOP ranking in terms of production capacity.

LRC offers all required certifications such as ISO 9001 and IATF 16949 for a wide range of products meeting international requirements for the automotive market (AEC-Q101).

A Bipolar Junction Transistor has either a npn-structure or a pnp-structure and therefore comprises two subsequent pn-junctions. The currents are combined negatively charged electrons and positively charged holes as charge carriers. Bipolar junction transistors are usually used in two different types of applications: switching and amplification.

LRC’s General Purpose Transistors cover the Collector-Emitter voltage VCEO from -400V to 400V and Collector Current from -1.5A to 4.5A in a variety of packages such as SOT, DFN and TO.

You will find more details about LRC's Switching Transistors, Digital Transistors, HF Transistors and Power Transistors here:

Product overview of Transistors of our partner Leshan Radio Co. Ltd. (LRC)

A MOSFET (Metal-oxide-semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor which is widely used for switching and amplifying signals with the capability to work up to a few hundred KHz.

LRC's MOSFET portfolio offers a range of breakdown voltages from –150V to 200V combined with state-of-the art packaging.

More details about LRC’S MOSFETS are available here:

Product overview of Small Signal MOSFETs of our partner Leshan Radio Co. Ltd.

Product overview of Low Voltage Power MOSFETs of our partner Leshan Radio Co. Ltd.

Product overview of High Voltage MOSFETs of our partner Leshan Radio Co. Ltd.

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Company PANJIT International Inc. was founded in 1986 in Kaohsiung Taiwan. Panjit is employing approximately 3.000 people worldwide in their production sites and offices in Asia, Europe and the USA. With one Front-End factory in Taiwan and two Back-End factories in both, Taiwan and mainland China, Panjit is targeting the market segments like Automotive -, Industry-, Power- and Consumer-Applications.

It’s well assorted product spectrum stretches over various kinds of DiodesMOSFETsBipolar Transistors and Protection devices and has some specialties like SiC Schottky Diodes (SiC = Siliciumcarbid). Panjit is decorated with industry’s well known and required certificates like ISO9001, ISO14001, OHSAS18001 and IATF16949.

A Bipolar Junction Transistor has either a npn-structure or a pnp-structure and therefore comprises two subsequent pn-junctions. The currents are combined negatively charged electrons and positively charged holes as charge carriers. Bipolar junction transistors are usually used in two different types of applications: switching and amplification.

A MOSFET (Metal-oxide-semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor which is widely used for switching and amplifying signals with the capability to work up to a few hundred KHz. PANJIT has a range of different MOSFETS for many different applications.

There are the Small Signal MOSFETs, which are designed to reduce the size of electronic devices, as their downsized packages are suitable for highly integrated boards. Their purpose is to drive circuits and to switch the signal circuit.

With a BVDSS from 20V to 50V PANJIT develops a family for Low Voltage MOSFETs that are designed to be used for notebooks, tablet PCs and motherboards. Their target is to provide a low on-resistance and to improve the product performance by using the Trench structure wafer and advanced packaging technologies.

The Medium Voltage MOSFETs provide a BVDSS from 60V up to 200V, they are produced with Trench technology to enhance the products characteristics. Their main use cases are synchronous rectification circuits, and their target applications are consumer products such as power supplies and telecommunications power systems.

To complete the portfolio of MOSFETs, PANJIT offers High Voltage MOSFETs with BVDSS ranging from 400V up to 100V. There the application targets are the AC-DC power supply in chargers, home appliances, industrial equipment and a variety of LED lighting devices.

Finally, PANJIT has Super Junction MOSFETs for high-density power supply and inverter motor applications.

A broad range of the MOSFET portfolio has been qualified according to AEC.

Product overview of MOSFETs of our partner PANJIT International Inc.

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Founded in 1979 in Taipei City, Taiwan, TSC just celebrated its 40th birthday. Nowadays more than 1.800 people are working at Taiwan Semiconductor in 15 branch offices and its 4 production locations worldwide. TSC meets industry requirements like IATF 16949, ISO9001 and ISO14001 and has sets its focus topics on Power Management -, Automotive – and Lighting applications in its core markets: Asia and Europe.

With a well-developed product portfolio in DiodesRectifiersTransistorsMOSFETs and power Management ICs like LED DriversTSC can offer suitable products in TOP tier quality level to meet highest customer expectations. More than 2/3 of all TSC’s vast product line-up is automotive qualified (AECQ 101).

A Bipolar Junction transistor has either a npn-structure or a pnp-structure and therefore comprises two subsequent pn-junctions. The currents are combined negatively charged electrons and positively charged holes as charge carriers. Bipolar junction transistors are usually used in two different types of applications: switching and amplification.

TSC's Transistor family covers the collector-emitter voltage VCEO from -600V to 450V and a collector current from -3A to 5A in a variety of packages.

Product overview of Transistors of our partner Taiwan Semiconductor (TSC)

A MOSFET (Metal-oxide-semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor which is widely used for switching and amplifying signals with the capability to work up to a few hundred KHz.

TSC's Power MOSFET portfolio offers a broad range of breakdown voltages from –60 to 1000 V, with low gate charge and low on-resistance, that means a low Figure of Merit (FOM) combined with state-of-the art packaging such as PDFN.

Product overview of MOSFETs of our partner Taiwan Semiconductor (TSC)

A highlight in the portfolio of TSC are the AEC-qualified devices:
TSC has released 40V/60V automotive qualified Power MOSFETs based on Trench technology, with max. 175°C operating junction temperature and outstanding switching performance (low RDS(ON), low QG, low Output capacitance COSS).

Product overview of automotive  N-Channels of our partner Taiwan Semiconductor (TSC)

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The abbreviation JSCJ stands for Jiangsu Changjing Electronics Co., Ltd, a strongly emerging young company located in the city of Nanjing in Jiangsu province, China. JSCJ is the offspring of JCET, one of TOP3 of World’s biggest OSAT (Outsourced Semiconductor Assembly & Test) companies and dedicated (with this powerful background) to become one of the leading players in its market for semiconductor products.

JSCJ is offering a huge variety of products to address markets in the Industry, Consumer and Whitegoods sector and is furthermore continuously advancing into Automotive applications is focusing diodestransistorsfrequency devices (Crystal and Oscillator) and ICs with an ever-growing product portfolio. JCET, not only serves its own brand “JSCJ” but also many international semiconductors companies as ODM partner, has industry leading quality standards and carries certificates like ISO9001, ISO14001, OHSAS18001 and IATF16949.

A Bipolar Junction Transistor (BJT) has either a npn-structure or a pnp-structure and therefore comprises two subsequent pn-junctions. The currents are combined negatively charged electrons and positively charged holes as charge carriers. Bipolar junction transistors are usually used in two different types of applications: switching and amplification.

JSCJ has a broad portfolio of transistors for several different purposes and applications. Highlights are a low VSAT and the full range of digital transistors.

Overview of JSCJ's Bipolar Junction Transistors Product Portfolio

A Darlington Transistor consists of two single transistors, that are working closely toegether to amplify the current. Use cases are the amplification of analog signals and other applications, where a high current gain is necessary.

JSCJ has a wide range of Darlington Transistors with VCEO ranging from 30V up to 100V and a collector current IC ranging from 0,3A up to 10A.

Overview of JSCJ's Darlington Transistors Product Portfolio

A MOSFET (Metal-oxide-semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor which is widely used for switching and amplifying signals with the capability to work up to a few hundred KHz.

JSCJ's MOSFET portfolio offers a range of breakdown voltages from –100V to 800V combined with state-of-the art packaging. They aim for the consumer market for applications like wireless charger, motor drivers, security equipment, Li-Ion battery protection etc.

Overview of JSCJ's MOSFETs Product Portfolio

JSCJ’s has released a CSP (chip scale packaging) Power Mosfet CJ6207SP:

The CJ6207SP uses advanced trench technology to provide excellent RSS(ON) (common Drain topology) , low gate charge and operation with gate voltages as low as 2.5 V while retaining an 8 V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. The very tiny package CSP targets for space limited applications like wearables and cell phones.

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